收藏本站
November 2013
FDB12N50TM
N-Channel UniFET TM MOSFET
500 V, 11.5 A, 650 m ?
Features
? R DS(on) = 550 m ? (Typ.) @ V GS = 10 V, I D = 6 A
? Low Gate Charge (Typ. 22 nC)
? Low C rss (Typ. 12 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB12N50TM
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
11.5
6.9
V
A
I DM
Drain Current
- Pulsed
(Note 1)
46
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
456
11.5
16.7
4.5
165
1.33
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
R ? JC
Parameter
Thermal Resistance, Junction to Case, Max
FDB12N50TM
0.75
Unit
R ? JA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in 2 pad of 2 oz copper), Max.
62.5
40
o
C/W
?2007 Fairchild Semiconductor Corporation
FDB12N50TM Rev. C1
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB12N50UTM_WS MOSFET N-CH 500V 10A D2PAK
FDB14AN06LA0_F085 MOSFET N-CH 60V 67A D2PAK
FDB14N30TM MOSFET N-CH 300V 14A D2PAK
FDB150N10 MOSFET N-CH 100V 57A D2PAK
FDB15N50 MOSFET N-CH 500V 15A TO-263AB
FDB2532_F085 MOSFET N-CH 150V 79A D2PAK
FDB2614 MOSFET N-CH 200V 62A D2PAK
FDB2710 MOSFET N-CH 250V 50A D2PAK
相关代理商/技术参数
FDB12N50U 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 10A, 0.8ヘ
FDB12N50U_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 10A, 0.8??
FDB12N50UTM 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDB12N50UTM_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 10A, 0.8??
FDB12N50UTM_WS 功能描述:MOSFET 500V 10A 0.8Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB13AN06A0 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB13AN06A0_Q 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB14AN06L_F085 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 60A, 14.6mW